Abstract
Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these observations to the gate voltage dependant dynamical charge transfer between InSe and GaSe layers.
Research overview
The study examines mechanically assembled InSe/GaSe heterostructures. Transport measurements reveal hysteresis and a time-dependent conductance response to applied gate voltage, interpreted in terms of charge transfer between the two layers.
Cite this work
Arvind Shankar Kumar, Mingyuan Wang, Yancheng Li, Ryuji Fujita, Xuan P. A. Gao. Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures. ACS Applied Materials & Interfaces 12(41), 46854–46861 (2020). 10.1021/acsami.0c09635.
BibTeX citation
@article{wang2020insegaseheterostructures,
title = {{Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures}},
author = {Arvind Shankar Kumar and Mingyuan Wang and Yancheng Li and Ryuji Fujita and Xuan P. A. Gao},
year = {2020},
journal = {ACS Applied Materials \& Interfaces},
volume = {12},
number = {41},
pages = {46854--46861},
eprint = {2005.13514},
archivePrefix = {arXiv},
primaryClass = {cond-mat.mtrl-sci},
doi = {10.1021/acsami.0c09635},
url = {https://doi.org/10.1021/acsami.0c09635}
}
Related research
Earlier experimental research at Case Western Reserve University